? semiconductor components industries, llc, 2012 september, 2012 ? rev. 0 1 publication order number: ngtb40n120ihlw/d NGTB40N120IHLWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, and provides superior performance in demanding switching applications, offering both low on ? state voltage and minimal switching loss. the igbt is well suited for resonant or soft switching applications. incorporated into the device is a rugged co ? packaged free wheeling diode with a low forward voltage. features ? low saturation voltage using trench with field stop technology ? low switching loss reduces system power dissipation ? optimized for low case temperature in ih cooker application ? low gate charge ? these are pb ? free devices typical applications ? inductive heating ? consumer appliances ? soft switching absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 80 40 a pulsed collector current, t pulse limited by t jmax i cm 320 a diode forward current @ t c = 25 c @ t c = 100 c i f 80 40 a diode pulsed current, t pulse limited by t jmax i fm 320 a gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 260 104 w operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 40 a, 1200 v v cesat = 1.90 v e off = 1.40 mj e device package shipping ordering information NGTB40N120IHLWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 40n120ihl aywwg g e c
NGTB40N120IHLWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.48 c/w thermal resistance junction ? to ? case, for diode r jc 1.5 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 40 a v ge = 15 v, i c = 40 a, t j = 150 c v cesat ? ? 1.90 2.1 2.35 ? v gate ? emitter threshold voltage v ge = v ce , i c = 400 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 150 c i ces ? ? ? ? 0.5 2.0 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v, v ce = 0 v i ges ? ? 200 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 10400 ? pf output capacitance c oes ? 245 ? reverse transfer capacitance c res ? 185 ? gate charge total v ce = 600 v, i c = 40 a, v ge = 15 v q g 420 nc gate to emitter charge q ge 95 gate to collector charge q gc 178 switching characteristic, inductive load turn ? off delay time t j = 25 c v cc = 600 v, i c = 40 a r g = 10 v ge = 0 v/ 15v t d(off) 360 ns fall time t f 130 turn ? off switching loss e off 1.40 mj turn ? off delay time t j = 125 c v cc = 600 v, i c = 40 a r g = 10 v ge = 0 v/ 15v t d(off) 380 ns fall time t f 185 turn ? off switching loss e off 2.6 mj diode characteristic forward voltage v ge = 0 v, i f = 40 a v ge = 0 v, i f = 40 a, t j = 150 c v f 1.6 1.8 1.8 v
NGTB40N120IHLWG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 140 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) 12 10 2 0 160 figure 5. typical capacitance figure 6. diode forward characteristics v ce , collector ? emitter voltage (v) v f , forward voltage (v) 90 80 60 20 30 50 10 0 100000 3.0 2.5 2.0 1.5 1.0 0.5 0 140 i c , collector current (a) i c , collector current (a) capacitance (pf) i f , forward current (a) v ge = 20 to 11 v t j = 25 c 10 v 9 v 8 v 7 v 5 4 3 2 1 0 140 i c , collector current (a) v ge = 20 to 11 v t j = 150 c 15 v 11 v 8 v 7 v 5 4 3 2 1 0 160 i c , collector current (a) v ge = 20 to 11 v t j = ? 40 c 10 v 9 v 8 v t j = 25 c t j = 150 c 100 t j = 25 c t j = 125 c 7 v c ies c oes c res 120 100 80 60 40 20 0 120 100 80 60 40 20 0 140 120 100 80 60 40 20 0 140 120 100 80 60 40 20 0 8 6 4 40 70 10000 1000 100 10 120 100 80 60 40 20 0
NGTB40N120IHLWG http://onsemi.com 4 typical characteristics figure 7. typical gate charge figure 8. energy loss vs. temperature q g , gate charge (nc) t j , junction temperature ( c) 150 100 50 0 16 140 120 100 80 60 40 20 0 3.5 figure 9. switching time vs. temperature figure 10. energy loss vs. i c t j , junction temperature ( c) i c , collector current (a) 140 120 100 80 60 40 20 0 1 10 100 1000 34 30 26 22 18 4.5 figure 11. switching time vs. i c figure 12. energy loss vs. rg i c , collector current (a) rg, gate resistor ( ) 1 10 100 1000 75 65 55 45 35 25 15 5 6 v ge , gate ? emitter voltage (v) e off , turn ? off switching loss (mj) switching time (ns) e off , turn ? off switching loss (mj) switching time (ns) e off , turn ? off switching loss (mj) 250 160 v ce = 600 v v ge = 15 v i c = 40 a rg = 10 v ce = 600 v 160 v ce = 600 v v ge = 15 v i c = 40 a rg = 10 t f t d(off) 50 54 v ce = 600 v v ge = 15 v t j = 150 c rg = 10 v ce = 600 v v ge = 15 v t j = 150 c rg = 10 t f t d(off) v ce = 600 v v ge = 15 v i c = 40 a t j = 150 c 85 200 58 62 300 350 400 450 3 2.5 2 1.5 1 0.5 0 38 42 46 34 30 26 22 18 50 54 58 62 38 42 46 5 4 3 2 1 0 12 8 4 0 4 3.5 3 2.5 2 1.5 1 0.5 0
NGTB40N120IHLWG http://onsemi.com 5 typical characteristics figure 13. switching time vs. rg figure 14. energy loss vs. v ce rg, gate resistor ( ) v ce , collector ? emitter voltage (v) 75 65 55 45 35 25 15 5 10 100 1000 10000 725 675 625 575 525 475 425 375 4 figure 15. switching time vs. v ce figure 16. safe operating area v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 725 675 625 575 525 475 425 375 1 10 100 1000 figure 17. reverse bias safe operating area v ce , collector ? emitter voltage (v) switching time (ns) e off , turn ? off switching loss (mj) switching time (ns) i c , collector current (a) i c , collector current (a) 85 t f t d(off) v ce = 600 v v ge = 15 v i c = 40 a t j = 150 c 775 v ge = 15 v i c = 40 a rg = 10 t j = 150 c 775 t f t d(off) v ge = 15 v i c = 40 a rg = 10 t j = 150 c 3.5 3 2.5 2 1.5 1 0.5 0 1 1000 100 10 1 0.01 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 10,000 1000 100 10 1 1 10 100 1000 v ge = 15 v, t c = 125 c
NGTB40N120IHLWG http://onsemi.com 6 typical characteristics figure 18. igbt transient thermal impedance pulse time (sec) thermal response (z jc ) figure 19. diode transient thermal impedance pulse time (sec) thermal response (z jc ) 50% duty cycle 20% 10% 5% 2% 1% single pulse 50% duty cycle 20% 10% 5% 2% 1% single pulse 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 r jc = 0.48 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 0 r jc = 1.5 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 1.76e ? 4 0.002 0.03 0.1 2.0 r i ( c/w) 0.01616 0.04030 0.060 0.090 0.176 0.093 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.48e ? 4 0.002 0.03 0.1 2.0 r i ( c/w) 0.19655 0.414 0.5 0.345 0.0934 figure 20. test circuit for switching characteristics
NGTB40N120IHLWG http://onsemi.com 7 figure 21. definition of turn off waveform
NGTB40N120IHLWG http://onsemi.com 8 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb40n120ihlw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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